MUR470 [BL Galaxy Electrical]
HIGH EFFICIENCY RECTIFIER; 高效率整流
| 型号： | MUR470 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | HIGH EFFICIENCY RECTIFIER |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
MUR470 --- MUR4100
BL
VOLTAGE RANGE: 700---1000 V
CURRENT: 4.0 A
HIGH EFFICIENCY RECTIFIER
FEATURES
Low cost
DO - 27
Diffused junction
Low leakage
Low forward voltage drop
High crrent capability
Easilycleaned with freon, alcohol, lsopropand
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-27, molded plastic
Terminals: Axial leads,solderable per MIL-STD- 202 ,
Method 208
Polarity: Color band denotes cathode
Weight: 0.041ounces, 1.15 grams
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by20%.
MUR470 MUR480 MUR490 MUR4100 UNITS
Maximumrecurrent peak reverse voltage
Maximum RMS voltage
700
800
V
V
V
VRRM
VRMS
VDC
900
630
900
1000
700
490
700
560
800
MaximumDC blocking voltage
1000
Maximumaverage forw ard rectified current
9.5mmlead length, @TA=75
A
4.0
IF(AV)
Peak forw ard surge current
10ms single half-sine-w ave
125.0
A
V
IFSM
superimposed on rated load
@TJ=125
Maximuminstantaneous forw ard voltage
@ 4.0A
1.8
VF
IR
Maximum reverse current
@TA=25
10.0
A
at rated DC blocking voltage @TA=100
100.0
75
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
t
rr
ns
pF
/W
(Note2)
(Note3)
50
CJ
30
RθJA
Operating junction temperature range
- 55 ----- + 150
- 55 ----- + 150
T
J
Storage temperature range
TSTG
NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
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2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
BLGALAXY ELECTRICAL
1.
Document Number 0262022
RATINGS AND CHARACTERISTIC CURVES
MUR470 --- MUR4100
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
trr
+0.5A
D.U.T.
0
(+)
PULSE
25VDC
(approx)
(-)
GENERATOR
(NOTE2)
-0.25A
OSCILLOSCOPE
(NOTE1)
1
NONIN-
DUCTIVE
-1.0A
1cm
SETTIMEBASEFOR10/20 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
5
4
10
TJ=25
Pulse Width=300µS
3
1.0
2
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.1
1
0
0
25
50
75
100
125 150 175
0.01
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
AMBIENT TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- PEAK FORWARD SURGE CURRENT
Z
FIG.5--TYPICAL JUNCTION CAPACITANCE
125
200
100
75
TJ=125
8.3ms Single Half
Sine-Wave
120
100
50
50
25
0
TJ=25
20
10
1
5
1
50
100
0.1 0.2 0.4
1
2
4
10 20 40
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,VOLTS
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BLGALAXY ELECTRICAL
2.
Document Number 0262022
相关型号：
MUR480-TP
Rectifier Diode, 1 Phase, 1 Element, 4A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT PACKAGE-2
MCC
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